| PART |
Description |
Maker |
| HY5DS573222F-28 HY5DS573222FP-28 HY5DS573222FP-36 |
GDDR SDRAM - 256Mb
256M(8Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| HY5DU283222Q HY5DU283222Q-45 HY5DU283222Q-55 HY5DU |
GDDR SDRAM - 128Mb
128M(4MX32) GDDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
| K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D5 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR SDRAM内存
8M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
8M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4D26323QG K4D26323QG-GC33 K4D26323QG-GC25 K4D2632 |
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K4D263238G-VC K4D263238G-GC36 K4D263238G-GC K4D263 |
128Mbit GDDR SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY5DU113222FMP-25 HY5DU113222FMP-22 HY5DU113222FMP |
GDDR SDRAM - 512Mb
|
Hynix Semiconductor
|
| HY5DU121622BT-5 HY5DU121622BT-6 HY5DU121622BTP-5 H |
512Mb(32Mx16) gDDR SDRAM
|
Hynix Semiconductor
|
| HY5DU281622ET HY5DU28162 HY5DU281622ET-4 HY5DU2816 |
128M(8Mx16) GDDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
| W9412G2CB |
1M × 4 BANKS × 32 BITS GDDR SDRAM
|
Winbond
|
| HY5DU561622ETP HY5DU561622ETP-28 HY5DU561622ETP-33 |
256M(16Mx16) gDDR SDRAM
|
Hynix Semiconductor
|
| HY5DS113222FM HY5DS113222FM-4 HY5DS113222FMP-4 HY5 |
512M(16Mx32) GDDR SDRAM 16M X 32 DDR DRAM, 0.6 ns, PBGA144
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HB52E649E12-A6B HB52E649E12-B6B |
512 MB Registered SDRAM DIMM 64-Mword 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 4 Components) PC100 SDRAM
|
Elpida Memory
|
